PART |
Description |
Maker |
IRF7304TR |
Generation V Technology -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
IRF7311TR IRF7311TRPBF |
Generation V Technology 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
IRLML2402GTRPBF |
Generation V Technology
|
International Rectifier
|
IRF7403 IRF7403TRPBF |
Generation V Technology Power MOSFET
|
IRF[International Rectifier]
|
IRLMS6702 IRLMS6702TR |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG Infineon Technologies A...
|